5SHY4045L0001 3BHB018162R0001集成柵極換流晶閘IGCT(lntergrated ate ommutated Thyristors)是1996年問世的用于巨型電力電子成套裝置中的新型電力半導(dǎo)體器件。IGCT是一種基于GTO結(jié)構(gòu)、利用集成柵極結(jié)構(gòu)進(jìn)行柵極硬驅(qū)動(dòng)、采用緩沖層結(jié)構(gòu)及陽(yáng)極透明發(fā)射極技術(shù)的新型大功率半導(dǎo)體開關(guān)器件，具有晶閘管的通態(tài)特性及晶體管的開關(guān)特性。5SHY4045L00013BHB018162R0001由于采用了緩沖結(jié)構(gòu)以及淺層發(fā)射極技術(shù)，因而使動(dòng)態(tài)損耗降低了約50%，另外，此類器件還在一個(gè)芯片上集成了具有良好動(dòng)態(tài)特性的續(xù)流二極管，從而以其獨(dú)特的方式實(shí)現(xiàn)了晶閘管的低通態(tài)壓降、高陽(yáng)斷電壓和晶體管穩(wěn)定的開關(guān)特性有機(jī)結(jié)合.
GCT使變流裝置在功率、可靠性、開關(guān)速度、效率、成本、重量和體積等方面都取得了巨大進(jìn)展，給電力電子成套裝置帶來了新的飛躍。5SHY4045L0001 3BHB018162R0001是將GTO芯片與反并聯(lián)二極管和柵極驅(qū)動(dòng)電路集成在一起，再與其柵極驅(qū)動(dòng)器在外圍以低電感方式連接，結(jié)合了晶體管的穩(wěn)定關(guān)斷能力和晶聞管低通態(tài)損耗的優(yōu)點(diǎn)，在導(dǎo)通階段發(fā)揮晶閘管的性能，關(guān)斷階段呈現(xiàn)晶體營(yíng)的特性，5SHY4045L0001 3BHB018162R0001具有電流大、電壓高、開關(guān)頻率高、可靠性高、結(jié)構(gòu)緊湊、損耗低等特點(diǎn)，而且造成本低，成品率高，有很好的應(yīng)用前景。

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5SHY4045L0001 3BHB018162R0001采用晶聞管技術(shù)的GTO是常用的大率開關(guān)器件，它相對(duì)于采用晶體管技術(shù)的IGBT在截止電壓上有更高的性能，但廣泛應(yīng)用的標(biāo)準(zhǔn)GTO驅(qū)動(dòng)技術(shù)造成不均勻的開通和關(guān)斷過程，需要高成本的dv/dt和di/dt吸收電路和較大功率的柵極驅(qū)動(dòng)單元，因而造成可靠性下降，價(jià)格較高，也不利于串聯(lián).5SHY4045L0001 3BHB018162R0001但是，在大功率MCT技術(shù)尚未成熟以前，1GCT已經(jīng)成為高壓大功率低頻交流器的優(yōu)選方案
5SHY3545L0005ABB是電氣產(chǎn)品、機(jī)器人及運(yùn)動(dòng)控制、工業(yè)自動(dòng)化和電網(wǎng)領(lǐng)域的技術(shù) ，致力于幫助電力、工業(yè)、交通和基礎(chǔ)設(shè)施等行業(yè)客戶提高業(yè)績(jī)?；诔^125年的 歷史，ABB正在不斷地推動(dòng)能源和第四次工業(yè)，譜寫行業(yè)數(shù)字化的未來。ABB集團(tuán)業(yè)務(wù)遍布 100多個(gè)，雇員達(dá)13.2萬。ABB在中國(guó)擁有研發(fā)、制造、銷售和工程服務(wù)等 的業(yè)務(wù)活動(dòng)，40家本地企業(yè)，1.7萬名員工遍布于139個(gè)城市，線上和線下渠道覆蓋全國(guó)300多個(gè)城市。瑞士ABB相控可控硅5SHY35L4511。
ABB集團(tuán)總部位于瑞士蘇黎世，在蘇黎世、斯德哥爾摩和紐約證券交易所上市交易。ABB由兩家擁有100多年歷史的國(guó)際性企業(yè)——瑞典的阿西亞公司（ASEA）和瑞士的布朗勃法瑞公司（BBC Brown Boveri）在1988年合并而成。
作為數(shù)字化領(lǐng)域的隱形 企業(yè)，ABB正在進(jìn)一步運(yùn)用豐富的行業(yè)經(jīng)驗(yàn)，設(shè)計(jì)、建設(shè)和運(yùn)營(yíng) 的數(shù)字化解決方案，為客戶提供真正的差異化服務(wù)。ABB Ability?數(shù)字化解決方案 整合ABB現(xiàn)有的產(chǎn)品和服務(wù)，覆蓋所有客戶行業(yè)，進(jìn)一步鞏固ABB在第四次工業(yè)的行業(yè) 地位。瑞士ABB相控可控硅5SHY35L4511。

5SHY4045L0001

5SHY4045L0001 3BHB018162R0001 Integrated gate commutated Thyristors (lntergrated ate ommutated Thyristors) is a new type of power semiconductor device used in large power electronics sets. IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology, which has the on-state characteristics of thyristor and the switching characteristics of transistor. 5 shy4045l00013bhb018162r0001 as buffer structure was adopted and shallow emitter technology, thus make dynamic loss is reduced by about 50%, in addition, this kind of device is used in a chip has a good dynamic characteristic of the fly-wheel diode, In this way, the low on-state voltage drop, high on-off voltage and transistor stability switching characteristics of thyristor are organically combined.
GCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. 5SHY4045L0001 3BHB018162R0001 integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in the peripheral in a low inductance mode, combining the stable turn-off ability of the transistor and the advantages of the low-on-state loss of the transistor to play the performance of the thyristor in the on-stage. 5SHY4045L0001 3BHB018162R0001 has the characteristics of large current, high voltage, high switching frequency, high reliability, compact structure, low loss, and resulting in low cost, high yield, has a good application prospect. 5SHY4045L0001 3BHB018162R0001 GTO using crystal sniffing technology is a commonly used high rate switching device, it has higher performance in cut-off voltage than IGBT using transistor technology, but the widely used standard GTO drive technology causes uneven opening and closing process. The need for high cost dv/dt and di/dt absorption circuits and high-power grid drive units, resulting in reduced reliability, higher prices, and not conducive to series.5SHY4045L0001 3BHB018162R0001 However, before the high-power MCT technology is not mature, 1GCT has become the preferred solution for high voltage and high power low frequency communicators

5SHY4045L00015SHY3545L0005ABB is a technology in electrical products, robotics and motion control, industrial automation and power grids, helping customers in the power, industrial, transportation and infrastructure industries improve their performance. With more than 125 years of history, ABB is driving energy and the fourth industry to write the digital future of the industry. The ABB Group has more than 100 businesses and 132,000 employees. ABB has research and development, manufacturing, sales and engineering services in China, 40 local enterprises, 17,000 employees in 139 cities, online and offline channels covering more than 300 cities across the country. Swiss ABB phased thyristor 5SHY35L4511.
Headquartered in Zurich, Switzerland, ABB is listed on the Zurich, Stockholm and New York Stock exchanges. ABB was formed in 1988 by the merger of two international companies with a history of more than 100 years – Sweden’s ASEA and Switzerland’s BBC Brown Boveri.
As an invisible player in the digital space, ABB is further applying its extensive industry experience to design, build and operate digital solutions to provide customers with truly differentiated services. ABB Ability? The digital solutions integrate ABB’s existing products and services across all customer industries, further strengthening ABB’s position in the fourth industry. Swiss ABB phased thyristor 5SHY35L4511.

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